PART |
Description |
Maker |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
GT8G10306 |
STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
GT8G133 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
FJC690 |
Camera Strobe Flash Application
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
FJC790 |
Camera Strobe Flash Application
|
FAIRCHILD[Fairchild Semiconductor]
|
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
CDF |
ALUMINUM ELECTROLYTIC CAPACITORS FOR STROBE FLASH
|
RUBYCON[RUBYCON CORPORATION]
|
GT20G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT10G131 GT10.131 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
ST300V360J052 ST300V360J052L |
55 ∑C Strobe-Flash, Long-Life, 360 & 450 V Aluminum
|
Cornell Dubilier Electronics
|